150 °C (302 °F)

DC Boost Power Supply Module Converter Step Up Board 3-18V to ±5/9/12/15/24V

±5V output: Input 3~4.5V, output +5V MAX input current: 2A MAX output current: +Vo 1A, -Vo 200mA ±9V output: Input 3.3~8V, output +9V MAX input current: 1.8A MAX output current: +Vo 800mA, -Vo 180mA ±12V output: Input 3.3~11V, output +12V MAX input current: 1.8A MAX output current: +Vo 700mA;Vo, 150mA ±15V output: Input 3.3~13V, output +15V MAX input current: 1.8A MAX output current: +Vo 600mA, -Vo 1 20mA ±24V output: Input 3.6~18V, output +24V MAX input current: 1.8A MAX output current: +Vo 400mA, Vo 100mA Quiescent operating current: 3-4mA Working frequency: 400KHZ Operating temperature: -40~+125°C Storage temperature:. -65~+150°C 2.54mm pin header (if you choose pin output) Dimensions (excluding pin headers) 25 x 16.3 x 6.6mm

MRF150 RF Power Field-Effect Transistor 150 W to 150 MHz New

Download : RF Power Field-Effect Transistor. •Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)Efficiency = 45% (Typ)•Superior High Order IMD•IMD(d3) (150 W PEP) — – 32 dB (Typ)•IMD(d11) (150 W PEP) — – 60 dB (Typ)•100% Tested For Load Mismatch At All Phase Angles With30:1 VSWR.

MRF150 RF Power Field-Effect Transistor 150 W to 150 MHz New

Download : RF Power Field-Effect Transistor. •Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)Efficiency = 45% (Typ)•Superior High Order IMD•IMD(d3) (150 W PEP) — – 32 dB (Typ)•IMD(d11) (150 W PEP) — – 60 dB (Typ)•100% Tested For Load Mismatch At All Phase Angles With30:1 VSWR.

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